dual n-channel enhancement mode field symbol v ds v gs i dm t j , t stg symbol ty p max 48 62.5 74 110 r jl 35 40 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage 20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 6.4 30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 2 1.28 -55 to 150 t a =70c i d 8 AO9926E features v ds (v) = 20v i d = 8a (v gs = 4.5v) r ds(on) < 21m ? (v gs = 4.5v) r ds(on) < 25m ? (v gs = 2.5v) r ds(on) < 33m ? (v gs = 1.8v) esd rating: 2000v hbm general description the AO9926E uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. it is esd protected. standard product a o9926e is pb-free (meets rohs & sony 259 specifications). AO9926El is a green product ordering option. AO9926E and AO9926El are g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g1 d1 s1 g2 d2 s2 effect transistor www.freescale.net.cn 1 / 4
AO9926E symbol min typ max units bv dss 20 v 1 t j =55c 5 1 p a 10 p a v gs(th) 0.4 0.6 1 v i d(on) 30 a 18 21 t j =125c 25 30 21 25 m : 25 33 m : g fs 29 s v sd 0.76 1 v i s 2.5 a c iss 1160 pf c oss 187 pf c rss 146 pf r g 1.5 : q g 16 nc q gs 0.8 nc q gd 3.8 nc t d(on) 6.2 ns t r 12.7 ns t d(off) 51.7 ns t f 16 ns t rr 17.8 ns q rr 6.8 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice body diode reverse recovery time body diode reverse recovery charge i f =8a, di/dt=100a/ p s drain-source breakdown voltage on state drain current i d =250 p a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =8a reverse transfer capacitance i f =8a, di/dt=100a/ p s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss p a gate threshold voltage v ds =v gs i d =250 p a v ds =16v, v gs =0v zero gate voltage drain current i gss gate-body leakage current v ds =0v, v gs =4.5v r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m : v gs =2.5v, i d =7a i s =1a,v gs =0v v ds =5v, i d =8a v gs =1.8v, i d =6a turn-on rise time turn-off delaytime v gs =5v, v ds =10v, r l =1.25 : , r gen =3 : gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =10v, i d =8a gate source charge turn-on delaytime dynamic parameters v gs =0v, v ds =10v, f=1mhz gate drain charge v ds =0v, v gs =8v maximum body-diode continuous current input capacitance output capacitance a: the value of r t ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t ? 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r t ja is the sum of the thermal impedence from junction to lead r t jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 p s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev2: august 2005 www.freescale.net.cn 2 / 4
AO9926E typical electrical and thermal characteristic s 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1v v gs =1.5v v gs =2v 8v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 10 20 30 40 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =8a 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c i d =8a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c www.freescale.net.cn 3 / 4
AO9926E typical electrical and thermal characteristic s 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =8a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t on t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0 .1 s 1 s 1 0s dc r ds(on) limited t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 4
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